James S. Speck

University of California, Santa Barbara (US)

Research Areas

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H-index

120

Publications

1473

Citations

69240

i10-index

869

Publications & Citations Over Time

Top Cited Publications

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Title	Year	Citations
Prospects for LED lighting	2009	2129
Polarization effects, surface states, and the sour...	2000	1080
Role of threading dislocation structure on the x-r...	1996	825
Strain-induced polarization in wurtzite III-nitrid...	2006	703
Origin of defect-insensitive emission probability ...	2006	682
Direct Measurement of Auger Electrons Emitted from...	2013	657
Domain configurations due to multiple misfit relax...	1994	504
Structural characterization of nonpolar (1120) <i>...	2002	486
High-power AlGaN/GaN HEMTs for Ka-band application...	2005	485
Control of GaN surface morphologies using plasma-a...	2000	481

Publications

1.
Prospects for LED lighting
Year: 2009Citations: 2129DOI: 10.1038/nphoton.2009.32
2.
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Year: 2000Citations: 1080DOI: 10.1063/1.126940
3.
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
Year: 1996Citations: 825DOI: 10.1063/1.116495
4.
Strain-induced polarization in wurtzite III-nitride semipolar layers
Year: 2006Citations: 703DOI: 10.1063/1.2218385
5.
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
Year: 2006Citations: 682DOI: 10.1038/nmat1726
6.
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
Year: 2013Citations: 657DOI: 10.1103/physrevlett.110.177406
7.
Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory
Year: 1994Citations: 504DOI: 10.1063/1.357097
8.
Structural characterization of nonpolar (1120) <i>a</i>-plane GaN thin films grown on (1102) <i>r</i>-plane sapphire
Year: 2002Citations: 486DOI: 10.1063/1.1493220
9.
High-power AlGaN/GaN HEMTs for Ka-band applications
Year: 2005Citations: 485DOI: 10.1109/led.2005.857701
10.
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
Year: 2000Citations: 481DOI: 10.1063/1.1305830

About James S. Speck

James S. Speck is a researcher with 1473 publications and 69240 citations. They are affiliated with University of California, Santa Barbara. Their research focuses on . With an h-index of 120, they are among the top researchers in their field.

Citation Distribution

Distribution of citations across publications

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Impact Metrics Over Time

Citations per publication by year