Steven P. DenBaars

Material (Belgium) (BE)

Research Areas

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H-index

126

Publications

1514

Citations

66530

i10-index

848

Publications & Citations Over Time

Top Cited Publications

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Title	Year	Citations
Prospects for LED lighting	2009	2100
Direct formation of quantum-sized dots from unifor...	1993	1721
Increase in the extraction efficiency of GaN-based...	2004	1293
Polarization effects, surface states, and the sour...	2000	1071
Role of threading dislocation structure on the x-r...	1996	821
Absorption coefficient, energy gap, exciton bindin...	1997	732
“S-shaped” temperature-dependent emission shift an...	1998	705
Origin of defect-insensitive emission probability ...	2006	674
Structural characterization of nonpolar (1120) <i>...	2002	486
High-power AlGaN/GaN HEMTs for Ka-band application...	2005	477

Publications

1.
Prospects for LED lighting
Year: 2009Citations: 2100DOI: 10.1038/nphoton.2009.32
2.
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
Year: 1993Citations: 1721DOI: 10.1063/1.110199
3.
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Year: 2004Citations: 1293DOI: 10.1063/1.1645992
4.
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Year: 2000Citations: 1071DOI: 10.1063/1.126940
5.
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
Year: 1996Citations: 821DOI: 10.1063/1.116495
6.
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
Year: 1997Citations: 732DOI: 10.1063/1.120191
7.
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Year: 1998Citations: 705DOI: 10.1063/1.122164
8.
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
Year: 2006Citations: 674DOI: 10.1038/nmat1726
9.
Structural characterization of nonpolar (1120) <i>a</i>-plane GaN thin films grown on (1102) <i>r</i>-plane sapphire
Year: 2002Citations: 486DOI: 10.1063/1.1493220
10.
High-power AlGaN/GaN HEMTs for Ka-band applications
Year: 2005Citations: 477DOI: 10.1109/led.2005.857701

About Steven P. DenBaars

Steven P. DenBaars is a researcher with 1514 publications and 66530 citations. They are affiliated with Material (Belgium). Their research focuses on . With an h-index of 126, they are among the top researchers in their field.

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Distribution of citations across publications

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